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cha3090 - 98f ref. : dscha30903245 - 02 sep 13 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 81 - 86ghz medium power amplifier gaas monolithic microwave ic description functional diagram the cha3090 - 98f is a three - stage monolithic medium power amplifier. this circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode. it is dedicated to e - band telecommunication, parti cularly well suited for the new generation of high capacity backhaul. the circuit is manufactured with a phemt process, 0.1m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form with bc b layer protection. main features main electrical characteristics tamb.= +25c symbol parameter min typ max unit freq frequency range 81 86 ghz gain linear gain 13 db p1db output power @1db comp. 17 dbm psat saturated output power 19 dbm dr detection dynamic range (for output power detection up to psat) 20 db vdet vref dc in out vd1 vd2h vd3h vd2b vd3b vg1 vg2 vg3b vg3h 8 10 12 14 16 18 20 22 24 6 8 10 12 14 16 18 20 22 79 80 81 82 83 84 85 86 87 88 linear gain (db) pout @ 1db comp & 3db comp (dbm) frequency (ghz) output power (dbm) and linear gain (db) p - 1db p - 3db s21
cha3090 - 98f 81 - 86ghz medium power amplifier ref. : dscha30903245 - 02 sep 13 2 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c, vd = dc = 3.5v, id (quiescent) = 280ma symbol parameter min typ max unit freq frequency range 81 86 ghz gain linear gain 13 db p1db output power @ 1db compression 17 dbm psat saturated output power 19 dbm dr detection dynamic range (for output power detection up to psat) 20 db vdetect voltage detection vref - vdet up to psat 50 to 1400 mv rlin input return loss 8 db rlout output return loss 12 db gain ctrl gain control range with vg1&vg2 tuning (with vd fixed at 3.5v) 10 db nf noise figure 4.5 db vd1, vd2h, vd3h, vd2b, vd3b drain supply voltage 3.5 v id supply quiescent current 280 ma vg1, vg2, vg3b, vg3h gate supply voltage 0.15 v dc detector supply voltage 3.5 v idc detector bias current 240 a these values are representative of on - wafer measurements that are made without bonding wires at the rf ports but with 10k? resistor in parallel on pads vdet and vref. absolute maximum ratings (1) tamb.= +25c symbol parameter values unit vd drain bias voltage 4v v id drain bias current 350 ma vg gate bias voltage - 2 to +0.4 v pin maximum continuous input power +12 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage.
81 - 86ghz medium power amplifier cha3090 - 98f ref. : dscha30903245 - 02 sep 13 3 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on - wafer sij parameters tamb.= +25c, vd = dc = 3.5v, id (quiescent) = 280ma freq (ghz) s11 (db) phs11 () s21 (db) phs21 () s12 (db) phs12 () s22 (db) phs22 () 60 - 1.93 130.9 - 26.09 72.3 - 41.2 - 79.7 - 3.51 - 177.5 61 - 2.69 129.1 - 21.66 80.7 - 45.04 - 34.3 - 3.79 168.5 62 - 2.77 127.5 - 16.72 70.0 - 44.41 - 147.6 - 5.11 158.6 63 - 3.34 118.0 - 12.79 33.4 - 44.79 - 163.0 - 8.23 139.2 64 - 4.51 117.5 - 7.88 4.3 - 56.26 46.6 - 14.98 139.6 65 - 3.82 112.4 - 6.1 - 29.5 - 42.61 - 117.1 - 16.1 - 133.2 66 - 2.56 107.6 - 4.52 - 54.8 - 48.11 - 163.5 - 8.49 - 138.4 67 - 2.93 94.8 - 2.97 - 86.3 - 60.04 172.8 - 7.54 - 125.1 68 - 2.82 89.0 - 1.24 - 114.5 - 58.99 161.0 - 5.06 - 157.1 69 - 3.12 78.6 0.57 - 141.7 - 63.33 119.1 - 3.08 - 162.4 70 - 3.24 67.5 2.33 - 166.3 - 58.85 38.3 - 3.19 - 179.3 71 - 3.57 54.6 4.97 166.3 - 52.89 11.8 - 2.63 167.6 72 - 4.21 36.3 7.62 129.1 - 53.16 - 17.2 - 2.41 158.4 73 - 5.67 15.1 10.15 92.3 - 47.26 - 31.3 - 2.87 139.8 74 - 9.04 - 11.8 12.3 48.2 - 42.71 - 45.5 - 3.65 122.2 75 - 14.38 - 13.9 12.86 6.4 - 39.03 - 84.7 - 6.03 117.7 76 - 15.07 0.2 13.17 - 36.0 - 39.29 - 130.6 - 7.61 109.5 77 - 13.81 - 12.6 13.2 - 73.6 - 42.29 - 173.4 - 7.98 103.5 78 - 13.32 - 38.5 13.31 - 109.7 - 48.37 148.8 - 9.39 92.4 79 - 13.16 - 69.7 13.29 - 145.7 - 62.34 84.1 - 10.6 82.7 80 - 13.87 - 104.8 12.95 178.2 - 52.79 - 87.1 - 12.44 86.0 81 - 13.98 - 120.6 12.64 145.3 - 53.89 - 168.0 - 13.06 71.0 82 - 12.47 - 143.5 12.75 110.1 - 50.06 - 75.9 - 14.07 53.0 83 - 10.43 - 156.0 12.8 76.8 - 43.17 - 107.0 - 16.27 40.9 84 - 8.91 - 176.1 13.29 37.4 - 40.54 - 137.0 - 18.44 27.0 85 - 7.46 168.0 13.18 - 2.2 - 39.05 - 165.6 - 20.89 7.8 86 - 5.5 148.7 13.13 - 45.2 - 38.12 166.2 - 25.18 9.7 87 - 3.78 125.2 12.71 - 93.6 - 37.8 128.6 - 23.56 59.7 88 - 2.8 98.0 10.99 - 143.9 - 39.17 89.5 - 16.6 34.7 89 - 3.06 72.4 7.94 168.1 - 41.29 53.6 - 13.36 0.6 90 - 3.86 49.5 4.31 127.0 - 44.06 14.3 - 12.05 - 27.5 91 - 4.76 29.9 0.36 91.4 - 49.06 - 32.7 - 11.47 - 52.0 92 - 5.42 12.8 - 3.58 60.3 - 53.9 - 86.2 - 11.36 - 71.1 93 - 6.27 - 3.2 - 7.09 32.3 - 53.13 - 160.7 - 11.64 - 87.7 94 - 7.05 - 19.1 - 10.7 4.5 - 48.1 119.9 - 11.87 - 101.2 95 - 7.57 - 33.4 - 14.16 - 17.5 - 41.63 22.4 - 12 - 110.6 96 - 8.29 - 48.4 - 17.21 - 40.7 - 42.94 - 40.2 - 12.42 - 123.7 97 - 8.79 - 63.5 - 21.07 - 65.1 - 45.34 - 76.4 - 13.02 - 136.0 98 - 9.17 - 76.6 - 25.38 - 82.2 - 45.24 - 86.6 - 13.96 - 146.1 99 - 9.51 - 91.0 - 26.36 - 71.3 - 42.25 - 92.4 - 15.65 - 152.1 100 - 9.61 - 106.8 - 25.59 - 108.0 - 37.21 - 125.1 - 15.45 - 164.6
cha3090 - 98f 81 - 86ghz medium power amplifier ref. : dscha30903245 - 02 sep 13 4 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements tamb.= +25c, vd = dc = 3.5v, id (quiescent) = 280ma gain & return loss versus frequency output power at 1 & 3 db compression - 20 - 15 - 10 - 5 0 5 10 15 20 72 74 76 78 80 82 84 86 88 90 sij (db) frequency (ghz) s11 s22 s21 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 79 81 83 85 87 89 output power (dbm) frequency (ghz) p - 1db p - 3db
81 - 86ghz medium power amplifier cha3090 - 98f ref. : dscha30903245 - 02 sep 13 5 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements tamb.= +25c, vd = dc = 3.5v, id (quiescent) = 280ma gain & output power versus input power power detection versus output power differential voltage 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 gain (db) & output power (dbm) input power (dbm) power at 81ghz gain at 81ghz power at 86ghz gain at 86ghz 0 200 400 600 800 1000 1200 1400 1600 1800 2000 - 2 0 2 4 6 8 10 12 14 16 18 20 differential voltage detection (mv) output power (dbm) 81ghz 86ghz
cha3090 - 98f 81 - 86ghz medium power amplifier ref. : dscha30903245 - 02 sep 13 6 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements temp.= - 40c / +25c / +85c, vd = +3.5v, vg = +0.15v id= 330 ma @ - 40c / 280 ma @ +25c / 245ma @ +85c measurements are given in the test fixture access plans linear gain versus temperature input return loss versus temperature output return loss versus temperature 0 2 4 6 8 10 12 14 16 18 20 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 linear gain (db) frequency (ghz) - 40 c 25 c 85 c - 25 - 20 - 15 - 10 - 5 0 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 input return loss (db) frequency (ghz) - 40 c 25 c 85 c - 25 - 20 - 15 - 10 - 5 0 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 output return loss (db) frequency (ghz) - 40 c 25 c 85 c
81 - 86ghz medium power amplifier cha3090 - 98f ref. : dscha30903245 - 02 sep 13 7 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements tamb.= 25c, vd = +3.5v ; id= 280 ma measurements are given in the test fixture access plans noise figure versus frequency temp.= - 40c / +25c / +85c, vd = +3.5v id= 330 ma @ - 40c / 280 ma @ +25c / 245ma @ +85c measurements are given in the test fixture access plans noise figure versus frequency & temperature 3 3.5 4 4.5 5 5.5 6 80 81 82 83 84 85 86 87 nf (db) frequency (ghz) nf 3 3.5 4 4.5 5 5.5 6 6.5 7 80 81 82 83 84 85 86 87 nf (db) frequency (ghz) - 40 c +25 c +85 c
cha3090 - 98f 81 - 86ghz medium power amplifier ref. : dscha30903245 - 02 sep 13 8 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 70m. chip size: 3360x1780 35m all dimensions are in micrometers rf pads = 108 x 106 (bcb opening) dc pads = 86 x 83 (bcb opening) 1 2 3 4 5 6 7 8 9 21 20 19 18 17 16 15 14 13 22 11 10 12
81 - 86ghz medium power amplifier cha3090 - 98f ref. : dscha30903245 - 02 sep 13 9 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended circuit bonding table pad number pad name description 1, 3, 6 d1; d2h; d3h drain voltage (3.5v, 160ma) 16, 19 d3b, d2b drain voltage (3.5v, 120ma) 5 g3h gate voltage (0.15v) 17, 20, 21 g3b, g2, g1 gate voltage (0.15v) 14 t detector output 12 f detector reference output 13 v dc voltage detector (3.5v, 240a) 22 in rf in 11 out rf out 2, 4, 7 d1m; d2hm; d3hm not connected 15, 18 d3bm, d2bm not connected 8, 9, 10 th, dh, r not connected m not connected
cha3090 - 98f 81 - 86ghz medium power amplifier ref. : dscha30903245 - 02 sep 13 10 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly plan the design of the circuit integrates a half ribbon (75m wide) connection at the input and the output of the mmic amplifier compliant with a 50 ohm line on gaas mmic. the circuits have to be as close as possible to each other; the ribbon length must be as short as possible: typically 160m gap between two chips is considered, and the loop height must also be the smallest possible (80m). a second solution is to use wires (? 25m). in this case a minimum of two wires together with the same chip to chip distance mention above are necessary to reduce the inductance effect. nevertheless, simulations show an improvement of rf performance for e - band frequency range with the use of ribbon connection instead of wire. for dc connection (dc pads), a 25m bonding is preferred. due to bcb coating on the chip, qualification domain requires the chip to be glued. ribbon ( w75m , length 330m ) mmic wave access 160m wave access 105m mpa 75m ribbon (length ~ 330 m ) 160m gap [chip to chip) 75m ribbon (length ~ 330 m ) to vd power supply 120pf 10nf to vg power supply 120pf 120pf 120pf 10nf 10nf to vd power supply to vg power supply 120pf 120pf 120pf 120pf 120pf 10nf 10nf 10nf 10nf to vd power supply to vd power supply to vg power supply 120pf 10nf 10k ? 10k ? t f v
81 - 86ghz medium power amplifier cha3090 - 98f ref. : dscha30903245 - 02 sep 13 11 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic 3.5v, 280ma detector g3b g3b g3h in g2 d3h d2b d3b 250 ? g3h in g1 1k ? d1 12 ? 12 ? 250 ? 95 ? d2h 12 ? 12 ? 12 ? 12 ? 250 ? 800 ? 800 ? 250 ? out 6 ? 6 ? 6 ? 6 ? x4 x4 x4 x4 40ma 40ma 8 0ma 40ma 8 0ma output v 20k ? output t 1k ? 500 ? 20k ? 1k ? external resistor f 10k ? 500 ? external resistor 10k ? x4 x4 74k 2k 2k 2k 2k 74k 74k 2k 2k 2k 2k 74k
cha3090 - 98f 81 - 86ghz medium power amplifier ref. : dscha30903245 - 02 sep 13 12 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.u ms - gaas.com . ordering information chip form: cha3090 - 98f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semicondu ctors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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